08 Sep

LatticeAx used to prepare GaN m-plane end facets

Researchers at Yale University developed a novel conductivity based selective electrochemical etching  to introduce nanometer sized pores into GaN. The fabrication process for the edge-emitting laser cavity samples included cleaving with the LatticeAx 420, diamond-tipped cleaving tool to form the GaN m-plane end facets. See the paper in the Proc. of SPIE Vol. 9748 97480Q-7. For more information contact Ge Yuan, ge.yuan@yale.edu

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