08 Sep

New Directions in GaN Photonics

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  • September 8, 2016 Create Date
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Researchers at Yale University developed a novel conductivity based selective electrochemical etching  to introduce nanometer sized pores into GaN. The fabrication process for the edge-emitting laser cavity  samples included cleaving with the LatticeAx 420, diamond-tipped cleaving tool to form the GaN m-plane end facets.


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